HGQ022N03A是华润华晶的一款30V 140A MOS管,采用DFN5X6封装,东森微电子是华晶授权代理商,常备HGQ022N03A库存,并可免费提供样品及技术支持,可开13%增票.
HGQ022N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is PDFN5*6, which accords with the RoHS standard.
* Fast Switching
* LowON Resistance(Rdson≤2.2mΩ)
* Low Gate Charge
* Low Reverse transfer capacitances
* 100%Single Pulse avalanche energy Test
Power switch circuit of adaptor and charger.