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CJP75N80 |
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CJP75N80是CJ长电的一款MOS管|IGBT|模块,我司不但为您提供可靠的全新原装CJP75N80,还可提供CJP75N80应用资料、免费样品及产品研发技术支持!详情可致电垂询. | 元件型号:CJP75N80 | 元件品牌:CJ长电 |
全新原装正品保障,质量是企业的生命! |
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TO-220 Plastic-Encapsulate Transistors CJP75N80 N-Channel Power MOSFET General Description The CJ75N80 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications. FEATURE Advanced trench process technology Special designed for convertors and power controls High density cell design for ultra low RDS(on) Fully characterized avalanche voltage and current Fast switching Avalanche energy 100% test APPLICATIONS Power switching application Hard switched and high frequency circuits Uninterruptible power supply Equivalent Circuit Maximum ratings (at TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source voltage VDSS 75 Gate-Source Voltage VGS ±258 V Drain Current(DC) at TC=25℃ 80 Drain Current(DC) at TC=100℃ ID(DC) 78 Drain Current-Continuous @Current-Pulsed(note1) IDM(pulse) 320 A Peak diode recovery voltage dv/dt 0.6 V/ns Power Dissipation PD 2 W Derating factor 1.13 W/℃ Single Pulsed Avalanche Energy(note2) EAS 580 mJ Thermal Resistance, Junction-to-Ambient 63 Thermal Resistance, Junction-to-Case 0.88 ℃/W Operating Junction and storage Temperature Range Tj, Tstg -55 ~175 ℃ Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. EAS condition: Tj=25℃ , VDD=50V,VG=10V,L=0.3mH,ID=62A |
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