The NCE40P40K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
● VDS =-40V,ID =-40A
RDS(ON) <14mΩ @ VGS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
Package:TO-252,VDS (max):-40V,ID(max):-40A,PD(max):80W,VTH (typ):-1.9V,VGS (max):20V,RDS(on)(typ)(@10V):10.5mΩ,RDS(on)(typ)(@4.5V):12.5mΩ,RDS(on)(typ)(@2.5V):