The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
●  VDS =55V,ID =120A
    RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ)
●  High density cell design for ultra low Rdson
●  Fully characterized avalanche voltage and current
●  Good stability and uniformity with high EAS
●  Excellent package for good heat dissipation
●  Special process technology for high ESD capability