This device has a driver structure that enables to drive independent referenced channel power MOS or IGBT. The high-side (floating) section is enabled to work with voltage rail up to 600 V. The logic inputs are CMOS/TTL compatible for ease of interfacing with controlling devices.

Features:

• High voltage rail up to 600 V
• dV/dt immunity ±50 V/nsec in full temperature range
• Driver current capability:
  • 400 mA source,
  • 650 mA sink
• Switching times 70/40 nsec rise/fall with 1 nF load
• 3.3 V, 5 V, 15 V CMOS/TTL input comparators with hysteresis and pull-down
• Internal bootstrap diode
• Outputs in phase with inputs
• Dead time and interlocking function